国家/地区 日本（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L029/06（2） H01L029/66（2） H01L029/786（2）
H01L051/05（2） H01L051/30（2）
发明人 SATO S（2）
公开年 2013（2）
申请年 2011（2） 
专利权人

Electronic apparatus e.g. graphene FET has several anti dots in which graphene film is provided with defect of carbon atom is distributed, and area whose density is set lower than area where anti dot occupies.

HARADA N, SATO S

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T