国家/地区 中国（4）
IPC部 H（3） C（2）
IPC大类 H01（3） C01（2）
IPC小类 C01B（2） H01M（2）
IPC C01B031/04（2）
发明人 SONG W（5）
公开年 2013（3）
申请年 2013（5）
专利权人 UNIV ZHEJIAN.（3）

Thin film transistor has laminating structure of oxide layer, where graphene layer is provided between source electrode and drain electrode.

LEE S S, AN K S, LIM J, MYUNG S, SONG W, JUNG M W

Manufacture of graphene oxide involves adding graphite powder to N-methyl morpholine-N-oxide, mixing, adding acid and potassium permanganate, vibrating, introducing oxygen, centrifuging, precipitating, washing and freeze-drying.

LI Q, SONG W, JI G, FENG Y, TU J, WANG J

Nickel-cobalt oxide/graphene composite material, comprises nickel cobalt oxide and graphite, where nickel cobalt oxide is nickel cobaltite.

CAO G, LIU S, ZHU T, SONG W, TU F, ZHAO X, XIE J

Cobalt-based complex oxide/graphene composite material, is prepared from nano grade cobalt-based complex oxide and graphite stones.

CAO G, ZHU T, LIU S, ZHAO X, XIE J, SONG W, TU F

Zinc-iron oxide/graphene composite material used as a magnetic material, comprises nano grade zinc-iron oxide particles and graphene.

CAO G, XIE J, LIU S, ZHAO X, SONG W, ZHU T