国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2）
发明人 SUN L（4）
公开年
申请年 2013（2） 
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（4）

Manufacture of nitrogen-doped graphene field effect transistor involves immersing graphene field effect transistor to be treated with an exposed channel into nitrogen-containing solution, and irradiating exposed channel of graphene field effect transistor with laser.

CHI J, REN H, SUN L, YUE J

Graphene based memory structure, has three electrodes formed on base body, where second electrode is fixed below to beam and third electrode is connected with base body, which is suspended above graphene suspension beam and second electrode.

CHI X, ZHANG J, DENG Y, SUN L

Preparing graphene nano-belt carbon fiber, comprises e.g. coating surface of metal-plated single-walled carbon nano-tubes, etching, and drawing filaments of carbon nano-tubes, molding, and post-processing.

SUN L, WANG G, YU F

Preparation of graphene used for preparing doped graphene, involves forming carbon layer on flame-coated substrate which has catalytic function or flame-coated substrate which does not have catalytic function using carbon source.

SUN L, YANG H