国家/地区 日本（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/336（2） H01L029/786（2） H01L051/05（2）
H01L051/30（2）
发明人 TATENO Y（2）
公开年 2018（2）
申请年
专利权人 SUMITOMO ELE.（2） UNIV TOHOKU（2）

Field effect transistor comprises a substrate and a graphene layer that is provided on the substrate, where drain electrode is provided on the graphene layer and a gate insulating film is provided on the graphene layer.

TATENO Y, UENO M, OKADA M, MITSUHASHI F, SUEMITSU M, FUKLDOME H, MIHASHI F, FUKIDOME H

Graphene transistor has graphene film that is arranged on support substrate, where ohmic electrode is arranged on graphene film and intermediate layer is arranged between support substrate and graphene film.

OKADA M, YONEMURA T, SUEMITSU M, FUKIDOME H, NAGASAWA H, TATENO Y