国家/地区 欧洲专利局（EPO）（4）
IPC部 C（3） H（3） B（2）
IPC大类 C01（3） H01（3） B82（2）
C08（2）
IPC小类 C01B（3） H01L（3） B82Y（2）
C08K（2）
IPC B82Y030/00（2） C01B031/04（2） C08K003/04（2）
发明人 THOMAS S（4）
公开年
申请年
专利权人

Method for manufacturing graphene transistor, involves providing substrate having flat surface, where surface comprises insulating region and adjacent semiconducting region, and forming graphene layer structure on surface.

BADCOCK T J, WALLIS R, GUINEY I, THOMAS S

Composition used for forming article, comprises soft elastomer, conductive nanostructure and metal ferrite doped reduced graphene oxide.

RAJALAKSHMAN PAI A, THOMAS S, KALARIKKAL N, PAI A R

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Producing nano-layers of graphene, comprises mixing graphite compound and polymerizable medium to form intercalated graphite compound, polymerizing intercalated graphite compound, and isolating nano-layers graphene.

STEPHANIE R, VITALIY D, THOMAS S, TROTSENKO S, STEFAN A, REICH S, DATSYUK V, STRASSBURG T, ARNDT S