国家/地区 中国（3）
IPC部 H（3） B（2）
IPC大类 H01（3） B82（2）
IPC小类 H01L（3） B82Y（2） H01B（2）
IPC H01L021/336（2）
发明人 TULEVSKI G S（3）
公开年
申请年 2011（2） 
专利权人 INT BUSINESS.（3）

Organic LED (OLED) device used for e.g. display, lighting has planar sheet of doped graphene located on exposed surface of substrate, and an interfacial layer located directly on exposed surface of planar sheet of doped graphene.

CHEN T, HANNON J B, LI N, OIDA S, SADANA D K, TULEVSKI G S, SALDANHA D K, CHEN Z

Apparatus for doping graphene or carbon nanotube thin-film field-effect transistor device, has thin-film field-effect transistor device on substrate, and contact metal on doped channel region of transistor device.

AFZALIARDAKANI A, CHANDRA B, TULEVSKI G S, BHUPESH C

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A