国家/地区 中国（7）
IPC部 B（7）
IPC大类 C01（7）
IPC小类 C01B（6） B82Y（5） B01J（3）
B01D（2） C01G（2）
IPC B82Y040/00（5） B01D053/02（2） B01J020/20（2）
B01J020/28（2） B01J020/30（2） C01B032/184（2）
C01B032/194（2） C01B032/198（2） C01G041/02（2）
发明人 WANG C（7）
公开年 2017（6）
申请年 2017（7）
专利权人 AECC BEIJING.（3）

Preparing polymer induced graphene growth morphology titanium photo-catalyst comprises e.g. mixing the graphene and distilled water and performing ultrasonic stirring to obtain graphene dispersion, adding dispersant and polymer monomer.

WU M, WANG C, LI L, GU W, HUANG Y

Preparing hollow structure nano tungsten oxide by in-situ growth of graphene oxide involves weighing certain amount of oxidized graphene and tungsten-containing precursor compound, mixing graphene oxide and adding absolute ethyl alcohol.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Modified graphene useful for self-lubricating wearable protective member comprises graphene oxide, anhydrous ethanol, deionized water, ammonium metatungstate and tungsten carbonyl mixed into tungsten-containing precursor mixture.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Preparing hollow nanostructure tungsten oxide wire involves mixing certain amount of graphene oxide, tungsten-containing precursor compound, anhydrous ethanol and deionized water with stirring uniformly for predetermined time.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Preparation of magnetic graphene aerogel useful in photovoltaic material, involves dissolving graphite oxide in deionized water and ultrasonically dispersing, then adding dopamine and iron salt, stirring, freeze-drying and heat-treating.

HU M, MA P, WANG C, YANG S

Preparation of graphene quantum dot solution used for graphene quantum dot security ink by adding phenol organic substance into anhydrous ethanol, completely dissolving, transferring into hydrothermal reaction kettle and reacting.

SUN Y, WANG C, LIU Y, JIN J, ZHAO G

Preparation of cladding-free multilayer graphene self-supporting tube used in e.g. microelectronic device, involve taking metal wire, soaking in dilute nitric acid, removing surface impurities, placing in absolute ethanol, and drying.

MI R, FU Z, WANG C, LI H, ZHONG M, LIU M, HUANG W, YUAN L, YANG X, ZHAO H