国家/地区 中国（2）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 WANG W（3）
公开年 2011（2）
申请年 2009（3）
专利权人 CHINESE ACAD.（2）

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Method for enhancing current-carrying ability of polymer thermistor add graphene or carbon nanotubes in an existing PPTC thermistor compositions due to their excellent electrical conductivity and physical properties.

WANG W

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q