国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/336（2） H01L029/06（2） H01L029/78（2）
发明人 WANG W（2）
公开年
申请年
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（2）

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T