国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 WEI T（3）
公开年 2020（2）
申请年 2018（3）
专利权人 INST SEMICON.（2）

Method for growing nitride film structure on pattern substrate, involves forming air pores between pattern substrate and nitride thin film, above graphene is grown in recessed pattern area of substrate and nitride film grown with air pores.

WEI T, CHANG H, YAN J, WANG J

Early strength semi flexible pavement comprises e.g. cement based grouting material contains slag, fly ash, sodium silicate, silica ash, limestone mineral powder, graphene, epoxy resin, metakaolin, phthalic anhydride and trimethylolpropane.

WEI T, LI P, XIA X, LU W

Schottky diode, has heavily doped N-type silicon carbide substrate whose rear part is provided with ohm contact electrode, where Schottky contact electrode is fixed on graphene layer for forming anode electrode.

RAN J, WEI T, WANG J