国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 WU Q（2）
公开年
申请年
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Method of forming multilayer graphene structure for use in e.g. nanoelectronics, involves growing graphene layer on growth substrate by removal of portion of sacrificial layer.

SUH H, JEON I, SONG Y J, WU Q, JUNG S, JEON I S, JUNG S J, SUH H S, SONG Y