国家/地区 中国（4）
IPC部 B（4） C（3）
IPC大类 B01（4） C02（3）
IPC小类 B01J（4） C02F（3）
IPC C02F001/30（3） B01J023/22（2） B01J027/24（2）
B01J035/10（2） C02F101/38（2）
发明人 XIA A（4）
公开年 2017（4）
申请年 2017（4） 
专利权人 UNIV SHAANXI SCI TECHNOLOGY（4）

Preparation of graphene/(040) crystal plane bismuth vanadate heterojunction structure for photocatalytic degradation of organic contaminants, involves dissolving bismuth(III) nitrate pentahydrate in dilute nitric acid, and stirring.

TAN G, WANG Y, ZHAO C, REN H, XIA A

Preparing graphene oxide/(040) crystal plane bismuth vanadate heterojunction useful for photocatalytic degradation of organic pollutants, comprises adding bismuth vanadate powder into graphene oxide solution and stirring to obtain precursor.

TAN G, WANG Y, ZHAO C, REN H, XIA A

Preparing carbonitride/graphene oxide/crystal face bismuth vanadium oxide heterostructure useful for photocatalytic degradation of organic pollutants, comprises reacting graphene oxide/bismuth vanadate with graphitic carbon nitride solution.

TAN G, WANG Y, ZHAO C, REN H, XIA A

Preparing bismuth vanadate of carbon nitride/graphene/(040) crystal for photocatalytic degradation of organic contamination, involves dissolving bismuth nitrate penta hydrate in dilute nitric acid and subjecting to hydrothermal reaction.

TAN G, WANG Y, ZHAO C, REN H, XIA A