国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/335（2） H01L029/20（2）
发明人 XING W（2）
公开年
申请年 2022（2） 
专利权人 UNIV XIDIAN（2）

Preparing large-scale wafer transparent gallium nitride hetero-junction (HEMT) device in radio frequency device and power electronic device field, involves preparing transparent gallium nitride HEMT device wafers on large-scale silicon wafers, turning over transparent gallium nitride device wafer.

HAO Y, ZHANG J, ZHOU J, ZHANG W, HOU S, XING W, WEI H, XU S, ZHAO X, LIU Z

Transparent gallium nitride (GaN)-based transistor comprises substrate layer from bottom to sequentially, channel layer and barrier layer and source electrode located on barrier layer, gate electrode and drain electrode.

HAO Y, ZHANG J, ZHOU J, YANG W, FENG X, XING W, HE J, XU S, ZHAO X, LIU Z