国家/地区 中国（2）
IPC部 H（2）
IPC大类
IPC小类
IPC
发明人 XU C（2）
公开年 2023（2）
申请年 2022（2） 
专利权人 UNIV BEIJING TECHNOLOGY（2）

Schottky junction detector for catalytic growth of graphene using phase change material in semiconductor optoelectronic device, has lower metal electrode, lightly doped n-type silicon, insulating dielectric layer, phase-change material film, graphene film, and upper metal electrode.

QIAN F, DENG J, XIE Y, HU L, XU C

Technical method for preparing graphical graphene with large area on original position, involves preparing single crystal metal foil and target substrate, and preparing substrate contact target substrate.

HU L, QIAN F, XU C, YANG F, MA X