国家/地区 中国（4）
IPC部 H（3） B（2） C（2）
G（2）
IPC大类 H01（3） B82（2） G09（2）
IPC小类 H01L（3） B82Y（2） G09F（2）
IPC G09F009/30（2） H01L051/00（2） H01L051/52（2）
H01L051/56（2）
发明人 XU D（4）
公开年 2021（2）
申请年 2020（2） 
专利权人 SAMSUNG DISP.（2） SAMSUNG ELEC.（2）

Manufacturing display apparatus involves preparing support substrate, forming metal oxide layer on surface of support substrate, metal oxide layer comprises first charges, and forming debonding layer on surface of metal oxide layer.

SIM J, SHIN H, KIM H, SEO D, XU D, SHEN X, SHEN J, SUH D, KIM H S, SHIM J H

Coating composition used to form stacked structure, and manufacture display device comprises graphene oxide, and solvent.

SHIN H K, SEO D K, SIM J H, CHO W J, KANG B H, MOON S J, PARK S C, SEO H W, CHO J E, SHIN K S, SHIN H, SUH D, SHIM J H, KANGBYOUNGHUN, WON S H, EUN J J, SOON S, SHEN X, XU D, SHEN J, CAO Y, JIANG B, WEN S, PARK S, SEO H, CHO J, SHIN G

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H