国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 XU X（2）
公开年
申请年 2010（2）
专利权人

Growing graphene on big-diameter silicon carbide carbon surface involves polishing and cleaning silicon carbide wafer carbon surface, putting the wafer in graphite tray, pumping the degree of vacuum, and pouring high-purity argon.

HU X, XU X, CHEN X, WEI R

Preparation of graphene involves oxidizing graphite, dispersed to obtain anhydrous N,N-dimethyl formamide solution of oxidized graphene, polymerizing using acrylic acid as monomer, and reducing.

QIN J, LI Z, XU X