国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 XUE Y（2）
公开年 2012（2）
申请年
专利权人 CHINESE ACAD.（2）

Preparing nitrogen-doped graphene useful for preparing electrical devices, comprises heating a catalyst under non-oxidizing atmosphere, inletting carbon and nitrogen source in the reactor to react, and processing chemical vapor deposition.

CHEN J, GENG D, HUANG L, LIU Y, WU B, XUE Y, YU G

Graphene preparation comprises heating loaded copper metal layer of substrate to melting point and copper phase, and depositing compound using chemical vapor deposition process on surface of copper metal layer.

CHEN J, GENG D, XUE Y, LIU Y, WU B, YU G, GUO Y, HUANG L