国家/地区 中国（5）
IPC部 C（4）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 XUE Z（5）
公开年 2017（3） 2016（2）
申请年 2016（5）
专利权人 SHANGHAI INS.（2）

Preparation of ultra-fine diamond-graphene composite material used e.g. for field emission display and semiconductor device comprises mixing superfine diamond and graphene in solvent, filtering, and subjecting to vacuum heat treatment.

LU J, XUE Z, XU X, ZHOU J

Vanadium/molybdenum trioxide/graphene complex electrochromic thin-film material comprises vanadium pentoxide sol, molybdenum trioxide sol and graphene raw materials.

ZHU Q, MA X, LU S, CHEN Y, XUE Z, WAN F, HE H, HU M

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X

Degradation of tetracycline involves dissolving bismuth nitrate and ferric chloride in nitrate solution, dropping sodium hydroxide, adjusting pH, adding graphene oxide, ultrasonic precipitating, washing and hydrothermal reacting.

TANG Y, XUE Z, LIU S

Photo-resist graphene removing method, involves forming silicon nitride layer on photo-resist graphene part, performing photo-resist acetone leaching part removing process, and performing photo-resist graphene removing process.

DI Z, JIA P, MA J, WANG G, WANG X, XUE Z, ZHANG M, ZHENG X