国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L031/18（2）
发明人 ZENG B（2）
公开年
申请年
专利权人 UNIV HEFEI TECHNOLOGY（2）

Ultraviolet photoelectric detector for e.g. optical communication, is carried out using metal-assisted chemical wet etching method to form small-diameter silicon nanowire array on lightly doped silicon wafer with preset crystal orientation.

WANG Y, ZENG B, WANG J, LUO L

Self-driven broadband photoelectric detector based on silicon micro-pore-copper oxide vertical structure hetero-junction, has specific metal thin-film electrode that is deposited on graphene above insulating layer.

WANG B, ZHANG Y, ZENG B, ZHAO Y, LI X, WU C