国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3） H01（3）
IPC小类 C23C（3）
IPC C23C016/26（3）
发明人 ZHANG J（3）
公开年 2013（2）
申请年 2012（2） 
专利权人 UNIV XIDIAN（2）

Preparation of graphene carbon nanotubes composite film for hybrid Schottky diode, involves using substrate whose entire or one surface is graphene catalyst, performing electroplating and carrying out chemical vapor deposition.

YANG L, CHEN Z, XU X, ZHANG J, YIN L, WU H, LIAO W, LI Q, BECK T J

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y