国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 ZHAO C（2）
公开年
申请年 2010（2）
专利权人

Graphene device manufacturing method, involves obtaining substrate, forming negative type or positive type graphene layer on substrate, forming grid regionon graphene layer, and forming inter-layer on graphene layer.

CHEN D, WANG W, ZHAO C

Preparation of conductive composite material by dispersing oxidized graphite and polyvinylpyrrolidone into water solution, thermally reducing oxidized graphite into graphene, and mixing water polyurethane and graphene water solution.

FAN Y, DING J, ZHAO C, YUAN N, LIU Y, YU C