国家/地区 中国（3）
IPC部 H（3） B（2）
IPC大类 H01（3） B82（2）
IPC小类 B82Y（2） H01L（2）
IPC
发明人 ZHAO H（3）
公开年 2012（3）
申请年 2011（3）
专利权人 UNIV PEKING（2）

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J

Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Manganese silicate lithium/graphene composite lithium ion positive material preparation method, involves calcinating pieces of precursor in nitrogen atmosphere at specified temperature to obtain target product.

PAN Q, WU X, XU J, YUAN A, ZHAO H