国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 ZHENG X（2）
公开年 2014（2）
申请年
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（2）

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z