国家/地区
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 ZHOU C（2）
公开年
申请年 2010（2）
专利权人

Combination of substrate comprising silicon, silicon carbide or metal and graphene precursor with aromatic structure e.g. benzene and functional groups e.g. dienes to grow graphene structure used in e.g. large integrated electronic devices.

ZHOU C, SALGUERO T T

Method for preparing graphene and high temperature inorganic salt phase change composite material for industrial production, involves dispersing graphite oxide in water, centrifuging obtained mixture and collecting supernatant layer.

ZHANG D, ZHANG Z, ZHOU C