国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 ZHOU P（2）
公开年 2012（2）
申请年 2012（2）
专利权人 UNIV FUDAN（2）

Method for increasing high-k dielectric constant on graphene buffer layer utilized for manufacturing carbon-based integrated circuit, involves providing graphene thin film to grow high dielectric constant and preparing buffer solution.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W

Method for growing high k dielectric for e.g. use in nanoscale preparation of planar device, involves using zinc oxide seed layer to prepare zinc oxide thin film on graphene film by using electron beam vacuum evaporation.

SHEN Y, SUN Q, WANG P, ZHOU P, ZHANG W