国家/地区 中国（2）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 ZUO Q（2）
公开年 2013（2）
申请年 2012（2） 
专利权人 SHANGHAI IC .（2）

Method for manufacturing edge of graphene pattern, involves preparing graphene thin film, and performing photo-etching and oxygen plasma etching processes for patterning graphene thin film to obtain edge of graphene.

ZUO Q, KANG X, ZENG S

Air gap/graphene interconnection structure, has substrate provided with barrier layer that is fixed on dielectric layer, and upper layer graphite nano-belt lines isolated in dielectric layer through air gap.

LI M, ZENG S, ZUO Q