国家/地区 韩国（4） 美国（2）
IPC部 B（4） C（4） H（2）
IPC大类 B01（4） C01（4） H01（2）
IPC小类 B01J（4）
IPC B01J019/08（4）
发明人 HAN G H（2） LEE Y H（2）
公开年 2013（2）
申请年 2011（2） 
专利权人 UNIV SUNGKYUNKWAN RES BUSINESS FOUND（4）

Producing reduced graphene oxide involves mixing of lumen output particle with aqueous solution of graphene oxide and exposing light, which corresponds to absorption wavelength, where lumen output particle is metal nanoparticles.

PARK H Y, PARK J H, YOO G W

Manufacture of oxidation graphene involves exposing ultraviolet ray exposure is exposed at wavelength of 160-200 nm,preferably 180-190 nm.

HUI H G, HUI L Y, HAN G H, LEE Y H

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J