国家/地区 韩国（2）
IPC部 B（2） C（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC B01J019/08（2）
发明人
公开年
申请年
专利权人

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A