国家/地区 韩国（2） 美国（2）
IPC部 B（3） C（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC B01J019/12（3）
发明人 AHN J（2） LEE J（2） LEE S（2）
LEE W（2）
公开年
申请年
专利权人 KOREA INST SCI TECHNOLOGY（3）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U