国家/地区 韩国（2）
IPC部 B（3） C（3）
IPC大类 B01（3） C01（3）
IPC小类 B01J（3） C01B（3）
IPC B01J019/24（3）
发明人
公开年 2014（3）
申请年 2012（3）
专利权人

Method for making graphene composite for forming electrode in capacitor device, involves combining composition, fist salt with divalent cation and second salt with trivalent cation, and heating solution under solvothermal conditions.

LI Z, YAN T, SUN X, LIU J, WANG G, GU Z

Manufacture of graphene involves pulverizing pure graphite, reacting resultant graphite powder with supercritical carbon dioxide generated by supercritical device, and separating graphene from obtained hexagonal carbon crystal.

HONG T E, SON J H, PARK G H, HONG S K

Apparatus for forming graphene layer used in manufacture of nanoscale graphene semiconductor device, has graphite segment separated from support stand by relative motion, and substrate that is adhered to the separated graphite segment.

LEE Y S, KIM J H