国家/地区 日本（2）
IPC部 B（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC B01J023/755（2）
发明人 HAYASHI K（2）
公开年
申请年
专利权人 FUJITSU LTD（2）

Producing multilayer graphene involves recrystallizing catalyst film by performing heat treatment of heating catalyst film containing iron and nickel in atmosphere containing hydrogen, and another atmosphere containing hydrogen and hydrocarbons to form stacked graphenes.

HAYASHI K

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K