国家/地区 中国（3） 日本（2） 美国（2）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3） C23C（3） C01B（2）
H01L（2）
IPC B82Y010/00（3）
发明人
公开年 2012（3）
申请年 2012（2） 
专利权人

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Preparation of graphene nanobelt for microelectronic devices, involves injecting silicon ions into silicon carbide, pyrolyzing to form carbon film, depositing nickel film on substrate, placing carbon film on nickel film, and annealing.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y