国家/地区 美国（4） 韩国（3） 中国（2） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B82（4） C01（4） H01（4）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人 PARK K（4）
公开年 2012（2）
申请年 2011（4）
专利权人 ELECTRONICS .（2） UNIST ACADIN.（2）

Graphene sheet comprises lower sheet containing layers of graphene and ridge, which is formed on lower sheet, and includes larger number of layers of graphene than lower sheet.

KWON S, KIM S Y, PARK K, KWAK J, CHU J H, CHOI J K, PARK K B, KWAK J S, JOO J, KIM H, CHOE J

Method of forming graphene device, involves patterning protection layer and seed layer to form protection pattern and seed pattern with respective lengths in respective directions.

PARK K

Manufacture of via electrode involves forming via hole at substrate, forming catalyst layer at sidewall and bottom of via hole, and forming graphene layer in via hole by exposing the catalyst layer to solution mixed with graphene particles.

KIM D, BAEK K, PARK K, PARK J M, KIM Z S, KIM J Y, JEONG Y S, DO L, KIM D P, BAEK K H, DO LEE M

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U