国家/地区 美国（4） 韩国（3） 中国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B82（4） C01（4） C23（3）
B01（2） H01（2）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人 AHN J（4）
公开年 2012（4）
申请年 2011（2）  2012（2） 
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S