国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B021/06（3）
发明人
公开年 2019（3）
申请年 2019（3） 
专利权人

Preparing reduced graphene oxide film/gallium nitride nanowire composite electrode comprises depositing the reduced graphene oxide film with a nickel salt catalyst as a substrate, and growing GaN nanowires by chemical vapor deposition.

WANG Y, SUN C, TANG X, LIU D

Cobalt nitride-embedded porous nitrogen-doped graphene material useful e.g. in electrode material of metal-air battery and/or electrolytic water, comprises nitrogen-doped graphene and cobalt nitride nanoparticles.

ZHANG J, SHU X, MA J

Preparation of two-dimensional material film includes preparing standard buffer solution, stirring, sonicating, adding graphene oxide, hexagonal boron nitride, alkene, sulfides, and inorganic layer material, and performing intercalation.

DENG Q