国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B021/064（2）
发明人
公开年 2013（2）
申请年
专利权人

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Manufacturing graphene co-extruded film, comprises forming hexagonal boron nitride layer in upper side of substrate, forming metal catalytic layer, forming top graphene layer, and removing metal catalytic layer and top graphene layer.

KIM H K, YANG W S, GEUN K H, SEOK Y U