国家/地区 日本（2）
IPC部 B（2） C（2） H（2）
IPC大类 B32（2）
IPC小类 B32B（2）
IPC B32B009/00（2）
发明人
公开年
申请年
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T