国家/地区 美国（4） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2） 韩国（2）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y030/00（4）
发明人
公开年 2011（3）
申请年 2011（4）
专利权人

Forming graphene, comprises flowing inert gas through chamber including graphite oxide disposed in it under first reaction conditions and exposing graphite oxide to hydrogen under second reaction conditions.

RAMAPRABHU S, KANIYOOR A, BABY T T

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S