国家/地区 美国（3） 韩国（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC C01B031/02（3）
发明人 AHN J（3）
公开年 2012（2）
申请年
专利权人 UNIV SUNGKYU.（2）

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W