国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B82（3） C01（3） C23（2）
H01（2）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人
公开年
申请年 2012（3）
专利权人

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Segmented graphene nanoribbon useful for generating heterojunctions and heterostructures, comprises at least two different graphene segments covalently linked to each other.

BLANKENBURG S, CAI J, FASEL R, FENG X, MUELLEN K, PASSERONE D, PIGNEDOLI C, RUFFIEUX P, MULLEN K, PIGNEDOLI C A, TSAI J, CAI Y

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T