国家/地区 世界知识产权组织（4） 中国（3） 美国（3）
IPC部 B（7）
IPC大类 B01（7）
IPC小类 C01B（7） B01J（5） B82Y（3）
IPC C01B032/159（7）
发明人
公开年 2022（5） 2021（2）
申请年 2021（3）  2020（2）  2022（2） 
专利权人

Transferring molecular material to surface involves contacting substrate with solution-synthesized polymer precursors, removing bulk pyrene matrix, and surface-assisted cyclodehydrogenation.

CROMMIE M F, FISCHER F R, BOKOR J, JACOBSE P H, MUTLU Z, MCCURDY R D, VEBER G C, RIZZO D J

Carbon nanotube hybrid powder material has mesh of carbon nanotubes intimately interspersed with particle of second material where second material is carbon, carbon black, graphite, graphene, metal oxide, silica and alumina, and carbon nanotube is single-walled carbon nanotube.

ARTHUR D J, PRADA S R A, PRADA SILVY R A

Preparing radionuclides for use as therapeutic agent for treatment of cancer, involves irradiating target aqueous suspension with neutron source, where at least some of target nuclide material absorbs neutrons from the neutron source.

LAPKA J, SAMIA A J, NOLTING D D, CHARLTON W S

Preparing carbon material useful in catalyst carrier for preparing carbon nanotubes and their complex materials comprises providing graphene oxide dispersion liquid of conductive particle intercalation, and granulating to remove solvent.

KE F, TAN Z, WU Y, QUAN Y, SUN D, ZHANG J

Dispersing method of nano-material, involves dissolving oxidant in strong acid to obtain strong acid solution of oxidant, adding nano-material into solution, stirring and dispersing to obtain nano-dispersion liquid.

QU S, CHENG K, LV W

Cold wall reactor comprises useful for preparing nano silicon, carbon nano tube, graphene and other nano material cold wall reactor box body whose inner part provided with the graphite crucible and middle material discharging pipe connected with collecting box feeding pipeline.

ZHAO D

Gas sensor used in system for detecting alkene e.g. ethylene, comprises reaction section comprising hydroxylamine salts and reacts with aldehyde and/or ketone, and response section including electrode supporting semiconductor material.

ISHIHARA S, NAKANISHI T, HONG D