国家/地区 德国（4）
IPC部 C（4） H（3） B（2）
IPC大类 C01（4） H01（3）
IPC小类 C01B（4）
IPC C01B032/182（4）
发明人
公开年 2017（2） 2018（2）
申请年 2016（4）
专利权人

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Doping graphene layer, comprises depositing graphene layer on carrier substrate, removing carrier substrate from graphene layer in first liquid and applying graphene layer on surface region of target substrate to be coated in second liquid.

Graphene synthesis device used for synthesizing graphene wire, has thermal conversion unit that is provided close to center portion of chamber, and catalyst that is placed on thermal conversion unit and formed as thin and long metal.

WON D K, YUAN D

Composite useful in nanofluid which is used in vehicle, comprises a graphene oxide, and a nanodiamond that is bonded on a surface of the graphene oxide.

SONG K H, KIM B W, KWAK J, CHA J, LYO I W, LEE H S, SONG K, KWOK J, CHE Z, LV Y, LI H