国家/地区 美国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y030/00（2）
发明人
公开年 2013（2）
申请年 2013（2）
专利权人

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Graphene useful in a device including a sensor and FET, comprises an etched edge portion, where the etched edge portion comprises a functional group e.g. ketone, aldehyde and carboxylic acid.

CHOI W M, HONG B H, CHOI J