国家/地区 欧洲专利局（EPO）（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3） H01L（3）
IPC C01B032/188（3）
发明人 FOURNEL F（2） FUGIER P（2） GOLANSKI L（2）
RODRIGUEZ G（2）
公开年 2018（2）
申请年 2017（2） 
专利权人 COMMISSARIAT.（2）

Substrate used to produce graphene film, comprises stack of self-supporting base, electrically insulating layer and catalyst layer with self-supporting base having basic monocrystalline area, in succession and superimposed on each other.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Producing graphene film used in e.g. biological sensors involves forming graphene film by epitaxial deposition in contact with platinum-containing monocrystalline zone of substrate catalyst layer using chemical vapor deposition device.

GOLANSKI L, FOURNEL F, FUGIER P, RODRIGUEZ G

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A