国家/地区 韩国（3） 美国（3） 世界知识产权组织（3） 中国（2）
IPC部 C（3） B（2） H（2）
IPC大类 C01（3） B82（2） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年 2013（3）
申请年 2012（3）
专利权人

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Forming electrode material comprises forming layer including graphene oxide on first conductive layer, immersing first and second conductive layers in electrolyte and electrochemically reducing part of graphene oxide in first layer.

TODORIKI H, SAITO Y, KAWAKAMI T, NOMOTO K, YUKAWA M, TODOROKI H, YUGAWA M, YONEDA Y

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E