国家/地区 中国（4）
IPC部 C（4） H（2）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/956（4）
发明人 WEI G（2）
公开年 2022（4）
申请年 2022（4）
专利权人

Preparing silicon carbide (SiC) nanowire array by magnetic field induction method, involves preparing layer of tin metal catalyst on substrate, plating layer of metal nickel (Ni) on surface of SiC nanowire with uniform size distribution to obtain Ni-SiC core-shell structure.

ZENG J, TANG Y, SU Y, WEI G, GUO Y, DING L

Method for preparing silicon carbide nanowire network p-n junction film on copper foil-graphene substrate, involves placing electrode in electrophoresis liquid containing nano-wire with different doping types, and combining electrophoretic deposition.

WEI G, DI P, MA L, DU L, ZANG Y, ZHANG Z, LIU X, NIU X

Preparing graphene-based photo-thermal conversion material comprises taking silicon carbide in the graphene oxide solution and ultrasonic stirring, adding surfactant, stirring and allowing to stand in the water, quickly freezing the complex precursor, and drying.

ZAN R, WANG Y, LI Y, FEI L

Preparation of microwave absorbing material involves adding nano-cobalt ferrite and nano-silicon carbide particles to multi-layer graphene oxide aqueous solution, reacting with ethylene glycol, centrifuging, drying, mixing with paraffin, pressing, and testing its electromagnetic parameter.

ZHENG W, YU S, HU C, WANG J, TIAN H