国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） B01（3） B82（2）
IPC小类 C01G（4） C01B（3） B01D（2）
B01J（2） B82Y（2）
IPC C01G041/02（4）
发明人 CUI Y（2） GAO J（2） GUO M（2）
TANG Z（2） TIAN H（2） WANG C（2）
ZHANG H（2） ZHOU Z（2）
公开年 2017（4）
申请年 2017（3） 
专利权人 AECC BEIJING.（2）

Preparing hollow structure nano tungsten oxide by in-situ growth of graphene oxide involves weighing certain amount of oxidized graphene and tungsten-containing precursor compound, mixing graphene oxide and adding absolute ethyl alcohol.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Preparing hollow nanostructure tungsten oxide wire involves mixing certain amount of graphene oxide, tungsten-containing precursor compound, anhydrous ethanol and deionized water with stirring uniformly for predetermined time.

CUI Y, GAO J, GUO M, TANG Z, TIAN H, WANG C, ZHANG H, ZHOU Z

Preparation of self-assembled graphene inline growth nano-rod array composite film, involves immersing metal zinc sheet in graphene oxide solution, reacting, removing, and drying to obtain zinc sheet self-assembled reduced graphene film.

FANG Y, ZHONG Y, YANG S, ZHANG S

Performing intrinsic modification of transition metal oxides to introduce oxygen vacancies involves mixing transition metal oxide and graphene oxide solution to obtain a dispersion and injecting liquid nitrogen into dispersion.

HUANG L, WAN J, ZHOU J