国家/地区 日本（2）
IPC部 B（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C01B032/15（2）
发明人
公开年 2016（2）
申请年
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H