国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C23（3）
IPC小类 C01B（3）
IPC C23C014/06（3）
发明人
公开年 2018（3）
申请年 2018（3）
专利权人

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Method for producing graphene, involves placing substrate in vacuum chamber, and heating graphite to sublimation under vacuum and depositing graphite on substrate after sublimation.

WANG W

Graphene nanoribbon composite film preparation used in energy storage, liquid crystal device, electronic device or biological material, involves infiltrating graphene sheet into surface of composite film by dispersion solvent.

DENG J, LIN Y, ZOU H