国家/地区 美国（3）
IPC部 C（3）
IPC大类 C23（3） C30（3） H01（3）
C01（2）
IPC小类 C23C（3）
IPC C23C016/02（3）
发明人
公开年 2016（2）
申请年 2016（3）
专利权人

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z